Blog - Plaques Froides Cooltech.it Fabricant

En 2020, nous avons une capacité de 2000 plaques froides par an par type (suivant le design) sur chaque ligne de production avec une capacité globale de plus de 15 000 coldplates par an avec un délai moyen de 8 semaines.

Les plaques froides à ailettes internes couplées à nos échangeurs de chaleurs sont extrêmement performants par rapport aux tubulaires pour la régulation de température d’électronique de puissance. la perte de charge est gérée dans la plaque à eau , les calories sont extraites.

nous pouvons travailler en brasé sous vide (en interne) ou en Friction Stir Welding, (en interne aussi). nous réalisons aussi les cooling units (pompe, circulateur, suivant plan ou design to cost). Le « Chiller Build to Spec » groupe froid jusque 90kW de refroidissement est aussi possible.

Cooltech.it c’est 12 millions de chiffre d’affaire avec 55 personnes.

Délai de 4 à 6 semaines pour les prototypes, série en 8 semaines après le kick-off meeting et l’approbation des plans. La fabrication est entièrement réalisée dans notre usine Italienne, les prix compétitifs, en Zone Euro, et le transport sous 24h avec votre transitaire habituel.

Voici une liste d’exemple de modules tous types sur lequel nous pouvons vous aider, (liste non exhaustive, soumettez nous votre croquis et nous répondrons rapidement)

Exemple de modules à refroidir (septembre 2020)	Cold Plates for Power Electronics
CM1000DX-24T 1000 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100DY-13T 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100DY-24A 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100DY-24NF 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100DY-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100DY-34A 100 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100DY-34T 100 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100RL-12NF 100 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100RL-24NF 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100RX-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100RX-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100RXP-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100RXP-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TL-12NF 100 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TL-12NF 100 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TL-24NF 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TL-24NF 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TX-13T 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TX-13T 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TX-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TX-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TXP-13T 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TXP-13T 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TXP-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM100TXP-24T 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM1200DB-34N 1200 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM1200DB-34N 1200 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150DY-34T 200 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150RL-12NF 150 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150RL-24NF 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150RX-13T 150 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150RX-24T 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150RXP-13T 150 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150RXP-24T 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TL-12NF 150 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TL-24NF 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TX-13T 150 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TX-24T 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TX-34T 150 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TXP-13T 150 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TXP-24T 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM150TXP-34T 150 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-12NF 200 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-13T 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-24A 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-24NF 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-24T 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-34A 200 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200DY-34T 200 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200RL-12NF 200 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200RL-24NF 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200RX-13T 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200RXP-13T 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200TL-12NF 200 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200TL-24NF 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200TX-13T 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200TX-24T 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200TXP-13T 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM200TXP-24T 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM225DX-24T 225 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM225DX-34T 225 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM225DXP-24T 225 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM225DXP-34T 225 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM2400HC-34N 2400 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DX-13T 300 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DX-24T 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DX-34T 300 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DXP-13T 300 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DXP-24T 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DXP-34T 300 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-12NF 300 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-13T 300 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-24A 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-24NF 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-24T 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-34A 300 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM300DY-34T 300 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-12NF 400 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-13T 400 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-24A 400 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-24NF 400 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-34A 400 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-34T 400 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400DY-66H 400 A - 3300 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400HA-24A 400 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM400HA-34H 400 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450C1Y-24T 450 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DX-13T 450 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DX-24T 450 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DX-34T 450 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DXP-13T 450 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DXP-24T 450 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DXP-34T 450 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM450DY-24T 450 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM500HA-34A 500 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM50RL-24NF 50 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM50TL-24NF 50 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600C1Y-24T 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DU-24NF 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DX-13T 600 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DX-24T 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DX-34T 600 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DXP-13T 600 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DXP-24T 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DXP-34T 600 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DY-12NF 600 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DY-13T 600 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DY-24A 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DY-24T 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600DY-34H 600 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM600HA-24A 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM750HG-130R 750 A - 6500 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM75DY-34A 75 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM75DY-34T 75 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM75RL-12NF 75 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM75RL-24NF 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM75TL-12NF 75 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM75TL-24NF 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM800DZ-34H 800 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CM800E6C-66H 800 A - 3300 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CMH1200DC-34S 1200 A - 1700 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CMH300DU-24NFH 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CMH400DU-24NFH 400 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
CMH600DU-24NFH 600 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FM400TU-07A 200 A - 75 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FM400TU-2A 200 A - 100 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FM400TU-3A 300 A - 150 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FM600TU-07A 200 A - 75 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FM600TU-2A 200 A - 100 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FM600TU-3A 300 A - 150 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FMF400BX-24A 400 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
FMF800DX-24A 400 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100CG1A065 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100CG1AL065 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100CG1AP065 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100CG1APL065 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100CG1B065 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100RG1B065 100 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100RG1B120 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100RG1C120 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100RL1A060 100 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100RL1A120 100 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM100RL1B060 100 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150CG1B065 150 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150CG1C120 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150CL1A060 150 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150CL1B060 150 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150RG1B065 150 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150RG1C120 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150RL1A060 150 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150RL1A120 150 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM150RL1B060 150 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200CG1B065 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200CG1C065 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200CG1C120 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200CL1A060 200 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200DV1A120 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200RG1B065 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200RG1C065 200 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200RG1C120 200 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM200RL1A060 200 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CG1A120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CG1AL120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CG1AP120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CG1APL120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CG1B120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CL1A120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25CL1B120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25RG1A120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25RG1AP120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25RG1B120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25RL1A120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM25RL1B120 25 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM300CG1C065 300 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM300DV1A120 300 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM300RG1C065 300 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM300RL1A060 300 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM400DV1A060 400 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM450CG1C065 450 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM450DV1A120 450 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM450RG1C065 450 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50B4L1C060 50 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50B5L1C060 50 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50B6L1C060 50 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1A065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1A120 50 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1AL065 50 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1AL120 50 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1AP065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1APL065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50CG1B065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50RG1A065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50RG1AP065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM50RG1B065 50 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM600DV1A060 600 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CG1A065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CG1AL065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CG1AP065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CG1APL065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CG1B065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CL1A120 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75CL1B120 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RG1A065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RG1B065 75 A - 650 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RG1B120 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RL1A060 75 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RL1A120 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RL1B060 75 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM75RL1B120 75 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PM800DV1B060 800 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PMH200CS1D060 200 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PS21A79 50 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PS21A7A 75 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSF15S92F6-A 15 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSF20L91A6-A	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSF25S92F6-A 25 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSH20L91A6-A	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSH50YA2A6 50 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSM03S93E5-A 3 A - 500 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05MC1FT 5 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05NC1FT 5 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05S51F6 5 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05S51F6-C 5 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05S72FT 5 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05S92E6-AG 5 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS05S92F6-AG 5 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS10MC1FT 10 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS10NC1FT 10 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS10S72FT 10 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS10S92E6-AG 5 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS10S92F6-AG 5 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS10SA2FT 10 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15MC1FT 15 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15NC1FT 15 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15S51F6 15 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15S51F6-C 15 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15S92E6-AG 15 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15S92F6-AG 15 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS15SA2FT 15 A - 1200 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS20S51F6 20 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS20S51F6-C 20 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS20S71F6 20 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)
PSS20S92E6-AG 20 A - 600 V	Oui Plaque froides brasées sous vide ou Friction stir welding	IGBT / High Voltage IGBT Modules (HV-IGBT) / Module de puissance intelligent (IPM) / DIPIPM dual in-line package transfer molded Intelligent Power Module (DIP-IPM) developed by Mitsubishi / DIODES / MOSFET / Silicon Carbide (SiC)


il y a beaucoup ci dessus de references Mitsubishi mais nous travaillons aussi à refroidir les marques et les modeles suivants BYD, Infineon, , and Silan Microelectronics Bosch, Continental and Delphi, ON Semiconductor, Semikron , HybridPACK Drive fluid cooling system coldplate by Infineon Technologies...

Les plaques froides cooltech.it sont fortement aussi utilisées dans les datacenter et les calculateurs HPC dans les domaines suivants : 
IT Equipment
● Hybrid basic: IT Equipment with Central Processing Unit (CPU)/Graphics Processing Unit (GPU) cold plates (with or without VR cold plates)
● Hybrid intermediate: IT Equipment with CPU/GPU & Dual In-line Memory Module (DIMM) cold plates (cooltech built to spec )
● Hybrid advanced: IT Equipment with CPU/GPU & DIMMs & additional (specify) cold plates (cooltech built to print)
● Full Liquid: IT Equipment Cooling with Full liquid cooling
Liquid Cooled Rack (cooltech built to spec avec NRE)
● Liquid cooled ready rack without door heat exchanger (DHX)
● Liquid cooled ready rack with door heat exchanger (DHX) Cooltech solution with Chiller.

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